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| SKM 100GB125DN Absolute Maximum Ratings Symbol Conditions IGBT Values Units SEMITRANS(R) 2N Ultra Fast IGBT Module SKM 100GB125DN Module Inverse Diode Features Characteristics Symbol Conditions IGBT min. typ. max. Units Typical Applications GB 1 21-05-2007 RAA (c) by SEMIKRON SKM 100GB125DN Characteristics Symbol Conditions Inverse Diode min. typ. max. Units SEMITRANS(R) 2N Ultra Fast IGBT Module SKM 100GB125DN Module Features This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX. This technical information specifies semiconductor devices but promises no characteristics. No warranty or guarantee expressed or implied is made regarding delivery, performance or suitability. Typical Applications GB 2 21-05-2007 RAA (c) by SEMIKRON SKM 100GB125DN Zth Symbol Zth(j-c)l Conditions Values Units SEMITRANS(R) 2N Zth(j-c)D Ultra Fast IGBT Module SKM 100GB125DN Features Typical Applications GB 3 21-05-2007 RAA (c) by SEMIKRON SKM 100GB125DN Fig. 1 Typ. output characteristic, inclusive RCC'+ EE' Fig. 2 Rated current vs. temperature IC = f (TC) Fig. 3 Typ. turn-on /-off energy = f (IC) Fig. 4 Typ. turn-on /-off energy = f (RG) Fig. 5 Typ. transfer characteristic Fig. 6 Typ. gate charge characteristic 4 21-05-2007 RAA (c) by SEMIKRON SKM 100GB125DN Fig. 7 Typ. switching times vs. IC Fig. 8 Typ. switching times vs. gate resistor RG Fig. 9 Transient thermal impedance Fig. 10 CAL diode forward characteristic Fig. 11 Typ. CAL diode peak reverse recovery current Fig. 12 Typ. CAL diode peak reverse recovery charge 5 21-05-2007 RAA (c) by SEMIKRON SKM 100GB125DN UL Recognized File 63 532 6 21-05-2007 RAA (c) by SEMIKRON |
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